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FQB30N06L
60V N-Channel Logic level QFET®

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Qualification Support

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

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Features

  • 32A, 60V, RDS(on) = 0.035W @VGS = 10 V
  • Low gate charge ( typical 15 nC)
  • Low Crss ( typical 50 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating
  • RoHS Compliant
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FQB30N06LTMFull ProductionRoHS Compliant$0.87TO-263(D2PAK)2TAPE REEL TBDLine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &3 (3-Digit Date Code)
    &K Line 2: FQB Line 3: 30N06L
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FQB30N06L is available. Click here for more information .

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    Qualification Support

    Click on a product for detailed qualification data

    Product
    FQB30N06LTM

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