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FQB33N10L
100V N-Channel Logic Level QFET®

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Models
Qualification Support

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

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Features

  • 33A, 100V, RDS(on) = 0.052W @VGS = 10 V
  • Low gate charge (typical 30 nC)
  • Low Crss (typical 70 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating
  • RoHS Compliant
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FQB33N10LTMFull ProductionRoHS Compliant$0.99TO-263(D2PAK)2TAPE REEL TBDLine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &3 (3-Digit Date Code)
    &K Line 2: FQB Line 3: 33N10L
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FQB33N10L is available. Click here for more information .

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    Models

    Package & leadsConditionTemperature rangeSoftware versionRevision date
    PSPICE
    TO-263(D2PAK)-2Electrical/Thermal-55°C to 175°C9.2Jul 11, 2001

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    Qualification Support

    Click on a product for detailed qualification data

    Product
    FQB33N10LTM

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