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100V N-Channel QFET®
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General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
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Features
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43.5A, 100V, RDS(on) = 0.039W @VGS = 10V
Low gate charge (typical 48nC)
Low Crss (typical 85pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
RoHS Compliant
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Datasheet
Download this datasheet
e-mail this datasheet
This page
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Product Status/Pricing/Packaging 
| FQB44N10TM | Full Production | RoHS Compliant | $1.22 | TO-263(D2PAK) | 2 | TAPE REEL
| TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K
Line 2: FQB
Line 3: 44N10
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Qualification Support
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