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FQB44N10
100V N-Channel QFET®

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Qualification Support

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

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Features

  • 43.5A, 100V, RDS(on) = 0.039W @VGS = 10V
  • Low gate charge (typical 48nC)
  • Low Crss (typical 85pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating
  • RoHS Compliant
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FQB44N10TMFull ProductionRoHS Compliant$1.22TO-263(D2PAK)2TAPE REEL TBDLine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &3 (3-Digit Date Code)
    &K Line 2: FQB Line 3: 44N10
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FQB44N10 is available. Click here for more information .

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    Qualification Support

    Click on a product for detailed qualification data

    Product
    FQB44N10TM

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