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60V P-Channel MOSFET QFET®
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General Description
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These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
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Features
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47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V
Low gate charge ( typical 84 nC)
Low Crss ( typical 320 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
RoHS Compliant
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Datasheet
Download this datasheet
e-mail this datasheet
This page
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Product Status/Pricing/Packaging 
| FQB47P06TM_AM002 | Full Production | RoHS Compliant | $1.80 | TO-263(D2PAK) | 2 | TAPE REEL
| TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K
Line 2: FQB
Line 3: 47P06
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Models
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Qualification Support
Click on a product for detailed qualification data
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