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800V N-Channel QFET®
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General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
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Features
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3.9A, 800V, RDS(on) = 3.6W @VGS = 10 V
Low gate charge ( typical 19 nC)
Low Crss ( typical 8.6 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
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Datasheet
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Product Status/Pricing/Packaging
| FQB4N80TM | Full Production | RoHS Compliant | $1.14 | TO-263(D2PAK) | 2 | TAPE REEL
| TBD | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2: FQB
Line 3: 4N80
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Qualification Support
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Eco Status