FQB4N80

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800V N-Channel QFET®

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FQB4N80TM Full Production ROHS Compliant $1.33 TO-263(D2PAK) 2 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQB
Line 3:4N80
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Features

  • 3.9A, 800V, RDS(on) = 3.6Ω @VGS = 10 V
  • Low gate charge ( typical 19 nC)
  • Low Crss ( typical 8.6 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

  • TBA
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