FQB50N06

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60V N-Channel QFET®

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FQB50N06TM Full Production ROHS Compliant $0.98 TO-263(D2PAK) 2 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQB
Line 3:50N06
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Features

  • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
  • Low gate charge ( typical 31 nC)
  • Low Crss ( typical 65 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°C maximum junction temperature rating
  • RoHS Compliant

Applications

  • TBA

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-263(D2PAK)-2 Thermal;Electrical -55°C to 175°C N/A OrCAD 16.3 Jun 14, 2011
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