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700V N-Channel QFET®
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been expecially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
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Features
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6.2 A, 700V, RDS(on) = 1.5W @VGS = 10 V
Low gate charge ( typical 30 nC)
Low Crss ( typical 15 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
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Datasheet
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Product Status/Pricing/Packaging
| FQB6N70TM | Not recommended for new designs | RoHS Compliant | TO-263(D2PAK) | 2 | TAPE REEL
| TBD | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2: FQB
Line 3: 6N70
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Qualification Support
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Eco Status