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FQB9P25
250V P-Channel QFET

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Models
Qualification Support

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.

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Features

  • -9.4A, -250V, RDS(on) = 0.62W @VGS = -10V
  • Low gate charge (typical 29nC)
  • Low Crss (typical 27pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

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Datasheet
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Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
FQB9P25TMFull ProductionRoHS Compliant$1.10TO-263(D2PAK)2TAPE REEL TBDLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&E&3 (3-Digit Date Code)
Line 2: FQB Line 3: 9P25
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FQB9P25 is available. Click here for more information .

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Models

Package & leadsConditionTemperature rangeVcc rangeSoftware versionRevision date
PSPICE
TO-263(D2PAK)-2Electrical/Thermal-55°C to 150°C0V to 40V9.2Sep 8, 2005

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Qualification Support

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Product
FQB9P25TM

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