Products » FQD2N60C 600V N-Channel Advance QFET® C-Series

FQD2N60C − 600V N-Channel Advance QFET® C-Series

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor^®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

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Product Status/Pricing/Packaging

Index	Product	Product & Eco Status	*Pricing	Packaging & Packing Info	**Package Marking Convention	Qualification Support	Compliance Certificates
0	FQD2N60CTM	Full Production ROHS Compliant	$0.55	TO-252 3L (DPAK) Details TO-252 3L (DPAK) Drawing TAPE REEL	Line 1:$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2:FQD Line 3:2N60C	RTHETA (JA) : 50 °C/W R_ƟJC : 2.87 °C/W Moisture Sensitivity Level (MSL) : 1 Show more... Max Reflow Temp : 260	RoHS IPC1752 RoHS/REACH/JIG RoHS/REACH/JIG
2	FQD2N60CTF	Obsolete as of 02-Mar-2011 ROHS Compliant	N/A	TO-252 3L (DPAK) Details TO-252 3L (DPAK) Drawing TAPE REEL	Line 1:$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K	RTHETA (JA) : 50 °C/W R_ƟJC : 2.87 °C/W Moisture Sensitivity Level (MSL) : 1 Show more... Max Reflow Temp : 260	RoHS IPC1752 RoHS/REACH/JIG RoHS/REACH/JIG

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Fairchild 1,000 piece Budgetary Pricing. *
If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
Top mark packaging information for product FQD2N60C is available. **

Features

1.9A, 600V, R_DS(on) = 4.7Ω(Max.) @V_GS = 10 V, I_D = 0.95A
Low gate charge ( Typ. 8.5nC)
Low C_rss ( Typ. 4.3pF)
100% avalanche tested
RoHS compliant

Applications

Lighting

Application Notes

Application Note	Description
AN-558	Introduction to Power MOSFETs and their Applications(244 K) 03-May-2013
AN-9010	MOSFET Basics(361 K) 05-Mar-2011
AN-9005	Driving and Layout Design for Fast Switching Super-Junction MOSFETs(1,778 K) 14-Feb-2013
AN-7533	A Revised MOSFET Model With Dynamic Temperature Compensation(132 K) 05-Mar-2011
AN-7510	A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options(222 K) 05-Mar-2011
AN-9065	FRFET® in Synchronous Rectification(156 K) 14-Feb-2013
AN-6099	New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications(1,172 K) 12-Mar-2013

Additional Resources

Design Tools Knowledgebase – Ask a Question Find a local sales office Product change notices (PCN) How to Buy Products or Order Samples


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