FQD3N60CTM_WS

N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,DMOS technology.      This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

• Fairchild 1,000 piece Budgetary Pricing. *
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• Top mark packaging information for product FQD3N60CTM_WS is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	Qualification Support	RoHS IPC1752	RoHS/REACH/ JIG Certificate of Compliance
FQD3N60CTM_WS	Full Production	ROHS Compliant	$0.68	TO-252 3L (DPAK)	3	TAPE REEL		Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2:FQD Line 3:3N60CS	FIT :  12.86   RTHETA (JA) :  50  °C/W RTHETA (JC) :  2.5  °C/W Show more ... Moisture Sensitivity Level (MSL) :  1   Max Reflow Temp :  260