FQH8N100C

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1000V N-Channel QFET® MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FQH8N100C Full Production ROHS Compliant $3.3 TO-247 3L 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQH
Line 3:8N100C
FIT :  12.86  
RTHETA (JA) :  40  °C/W
RTHETA (JC) :  0.56  °C/W
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Features

  • 8A, 1000V, RDS(on) = 1.45Ω @VGS = 10 V
  • Low gate charge (typical 53nC)
  • Low Crss (typical 16pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Applications

  • Other Industrial

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-247 3L Thermal;Electrical -55°C to 150°C 0V to 50V OrCAD 16.2 Feb 28, 2012
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