FQI8N60C

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high-energy pulse in the avalanche and commutation mode. These devices are well suited for high-efficiency switched-mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.

• Fairchild 1,000 piece Budgetary Pricing. *
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• Top mark packaging information for product FQI8N60C is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	Qualification Support	RoHS IPC1752	RoHS/REACH/ JIG Certificate of Compliance
FQI8N60CTU	Full Production	ROHS Compliant	$1.3	TO-262 3L (I2PAK)	3	RAIL		Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2:FQI Line 3:8N60C	FIT :  12.86   RTHETA (JA) :  40  °C/W RTHETA (JC) :  0.85  °C/W Show more ... Moisture Sensitivity Level (MSL) :  NA   Max Reflow Temp :  999