This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
| Product | Product & Eco Status | *Pricing | Packaging & Packing Info | **Package Marking Convention | Qualification Support | Compliance Certificates |
|---|---|---|---|---|---|---|
| FQN1N50CTA |
Full Production ROHS Compliant |
$0.29 | TO-92 3L Details AMMO |
Line 1:1N50C
Line 2:&3 (3-Digit Date Code)
|
RTHETA (JA) :
60
°C/W Moisture Sensitivity Level (MSL) : NA Max Reflow Temp : 999 |
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| Application Note | Description |
|---|---|
| AN-9065 | FRFET® in Synchronous Rectification(156 K) 14-Feb-2013 |
| AN-9010 | MOSFET Basics(361 K) 05-Mar-2011 |
| AN-6099 | New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications(1,172 K) 12-Mar-2013 |
| AN-7510 | A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options(222 K) 05-Mar-2011 |
| AN-558 | Introduction to Power MOSFETs and their Applications(244 K) 03-May-2013 |
| AN-7533 | A Revised MOSFET Model With Dynamic Temperature Compensation(132 K) 05-Mar-2011 |
| AN-9005 | Driving and Layout Design for Fast Switching Super-Junction MOSFETs(1,778 K) 14-Feb-2013 |