FQN1N60C

These N-Channel enhancement mode power field effect transistors are produced using Fairchild?s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

• Fairchild 1,000 piece Budgetary Pricing. *
• If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
• Top mark packaging information for product FQN1N60C is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	Qualification Support	RoHS IPC1752	RoHS/REACH/ JIG Certificate of Compliance
FQN1N60CTA	Full Production	ROHS Compliant	$0.3	TO-92 3L	3	AMMO		Line 1:1N60C Show more ... Line 2:$Y (Fairchild logo) &E (Space) &3 (3-Digit Date Code)	FIT :  12.86   RTHETA (JA) :  140  °C/W RTHETA (JC) :  50  °C/W Show more ... Moisture Sensitivity Level (MSL) :  NA   Max Reflow Temp :  999