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FQP18N20V2
200V N-Channel Advanced QFET V2 series

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Contents

General Description
Features
Product Status/Pricing/Packaging
Order Samples
Qualification Support

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

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Features

  • 18A, 200V, RDS(on) = 0.14W @VGS = 10 V
  • Low gate charge ( typical 20 nC)
  • Low Crss ( typical 25 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

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Datasheet
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Product Status/Pricing/Packaging      buy now

ProductProduct statusEco StatusPackage typeLeadsPacking methodPackage DrawingPackage Marking Convention**
FQP18N20V2Lifetime BuyRoHS CompliantTO-2203RAIL TBDLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&4 (4-Digit Date Code)
Line 2: PV2 Line 3: 18N20

Package marking information for product FQP18N20V2 is available. Click here for more information .

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Qualification Support

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Product
FQP18N20V2

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