FQP33N10

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100V N-Channel QFET®

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FQP33N10 Full Production ROHS Compliant $0.85 TO220 3-LEAD 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQP
Line 3:33N10
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Features

  • 33A, 100V, RDS(on) = 0.052Ω @VGS = 10 V
  • Low gate charge ( typical 38 nC)
  • Low Crss ( typical 62 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • 175°Cmaximum junction temperature rating

Applications

  • TBA

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
PSPICE
TO220 3-LEAD-3 Thermal;Electrical -55°C to 175°C N/A Orcad 9.1 Jun 14, 2011
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