FQPF10N60C

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600V N-Channel Advance QFET® C-Series

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

  • 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V
  • Low gate charge ( typical 44 nC)
  • Low Crss ( typical 18 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-220F-3 Thermal;Electrical -55°C to 150°C 0V to 50V OrCAD 15.7 Apr 26, 2011
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