FQPF11N50CF

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500V N-Channel FRFET® QFET® MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FQPF11N50CF Full Production ROHS Compliant $1.47 TO-220F 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQPF
Line 3:11N50CF
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Features

  • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V
  • Low Gate Charge (typical 43 nC)
  • Low Crss (typical 20pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • Fast Recovery Body Diode (typical 90ns)

Applications

  • TBA

Application Notes

Multilanguage - Chinese Multilanguage - English Multilanguage - Japanese Multilanguage - Korean