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600V N-Channel MOSFET QFET®
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General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
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Features
- 12A, 600V
- RDS(on) = 0.65W @VGS = 10 V
- Low gate charge ( typical 48 nC)
- Low Crss ( typical 21 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
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Datasheet
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Product Status/Pricing/Packaging
| FQPF12N60C | Full Production | RoHS Compliant | $1.30 | TO-220F | 3 | RAIL
| TBD | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2: FQPF
Line 3: 12N60C
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Qualification Support
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Eco Status