|  |
60V N-Channel Logic level QFET®
| | | | | |
|
|
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
|
back to top
Features
-
10A, 60V, RDS(on) = 0.11W @VGS = 10 V
-
Low gate charge ( typical 4.8 nC)
-
Low Crss ( typical 17 pF)
-
Fast switching
-
100% avalanche tested
-
Improved dv/dt capability
-
175°C maximum junction temperature rating
| | |
