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FRFET®: 500V N-Channel MOSFET QFET®
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General Description
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These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient
switched mode power supplies and active power factor
correction.
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Features
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13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V
Low gate charge (typical 43 nC)
Low Crss (typical 20pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode (typical 100ns)
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Datasheet
Download this datasheet
e-mail this datasheet
This page
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Product Status/Pricing/Packaging 
| FQPF13N50CF | Full Production | RoHS Compliant | $1.48 | TO-220F | 3 | RAIL
| TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K
Line 2: FQPF
Line 3: 13N50CF
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Application Notes
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Qualification Support
Click on a product for detailed qualification data
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