FQPF3N80C

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800V N-Channel Advance QFET® C-Series

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FQPF3N80C Full Production ROHS Compliant $0.92 TO-220F 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQPF
Line 3:3N80C
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Features

  • 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V
  • Low gate charge ( typical 13 nC)
  • Low Crss ( typical 5.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

  • TBA

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-220F-3 Thermal;Electrical -55°C to 150°C 0V to 40V OrCAD 10.3 Apr 26, 2011
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