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800V N-Channel Advance QFET® C-Series
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General Description
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These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
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Features
- 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V
- Low gate charge ( typical 13 nC)
- Low Crss ( typical 5.5 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
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