FQT1N60C

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600V N-Channel MOSFET QFET®

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.                                                                      This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FQT1N60CTF_WS Full Production ROHS Compliant $0.4 SOT-223 4L 4 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQT1N60C
FIT :  12.86  
RTHETA (JC) :  60  °C/W
Moisture Sensitivity Level (MSL) :  1  
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Features

  • RDS(on) = 9.3Ω (Typ.)@ VGS = 10V, ID = 0.1A
  • Low gate charge ( Typ. 4.8nC)
  • Low Crss ( Typ. 3.5pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Applications

  • Lighting

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
SOT-223 4L Thermal;Electrical -55°C to 150°C 0V to 50V OrCAD 15.7 Feb 28, 2012
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