FQU13N10L

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100V N-Channel Logic Level QFET®

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FQU13N10LTU Full Production ROHS Compliant $0.49 TO-251 3L (IPAK) 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQU
Line 3:13N10L
FIT :  12.86  
RTHETA (JA) :  50  °C/W
RTHETA (JC) :  3.13  °C/W
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Features

  • 10A, 100V, RDS(on) = 0.18Ω @VGS = 10V
  • Low gate charge (typical 8.7nC)
  • Low Crss (typical 20pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

  • LED TV

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-251 3L (IPAK) Thermal;Electrical -55°C to 150°C 0.1V to 30V Orcad 9.1 Feb 28, 2012
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