FQU1N60C

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600V N-Channel Advance QFET® C-Series

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FQU1N60CTU Full Production ROHS Compliant $0.44 TO-251 3L (IPAK) 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQU
Line 3:1N60C
FIT :  12.86  
RTHETA (JA) :  50  °C/W
RTHETA (JC) :  4.53  °C/W
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Features

  • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V
  • Low gate charge ( typical 4.8nC)
  • Low Crss (typical 3.5 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

  • Lighting

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-251 3L (IPAK) Thermal;Electrical -55°C to 125°C 0V to 50V OrCAD 10.3 Feb 28, 2012
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