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Home > H11A817B

H11A817B

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4-Pin DIP Phototransistor Output Optocoupler

General Description

The H11AA814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The H11A617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Support

Engineering Connections

Features

AC input response (H11AA814 only)
Compatible to Pb-free IR reflow soldering
Compact 4-pin dual in-line package
Current transfer ratio in selected groups:
H11AA814: 20-300%
H11AA814A: 50-150%
H11A617A: 40%-80%
H11A617B: 63%-125%
H11A617C: 100%-200%
H11A617D: 160%-320%
H11A817: 50-600%
H11A817A: 80-160%
H11A817B: 130-260%
H11A817C: 200-400%
H11A817D: 300-600%
C-UL, UL and VDE approved
High input-output isolation voltage of 5000Vrms
Minimum BV_CEO of 70V guaranteed

Applications

TBA

Application Notes

AN-4138: Design Considerations for Battery Charger Using Green Mode Fairchild Power Switch (FPS™) (408 K) Jan 26, 2012
AN-4129: Green Current Mode PWM Controller FAN7601 (366 K) Mar 05, 2011
AN-9032: DIP-Smart Power Module Test Board IV (435 K) Mar 05, 2011
AN-6014: Green Current Mode PWM Controller FAN7602 (400 K) Mar 05, 2011
AN-9019: Motor Drive System Using SPM® Inverter (267 K) Mar 05, 2011
AN-9033: DIP-Smart Power Module Test Board V (436 K) Mar 05, 2011

Browse All Application Notes

Safety Agency Certificates

For additional information please visit the Safety Agency Certificates page .