The H11AA814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The H11A617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

• AC input response (H11AA814 only)
• Compatible to Pb-free IR reflow soldering
• Compact 4-pin dual in-line package
• Current transfer ratio in selected groups:
  • H11AA814: 20-300%
  • H11AA814A: 50-150%
  • H11A617A: 40%-80%
  • H11A617B: 63%-125%
  • H11A617C: 100%-200%
  • H11A617D: 160%-320%
  • H11A817: 50-600%
  • H11A817A: 80-160%
  • H11A817B: 130-260%
  • H11A817C: 200-400%
  • H11A817D: 300-600%
• C-UL, UL and VDE approved
• High input-output isolation voltage of 5000Vrms
• Minimum BV_CEO of 70V guaranteed