H11D1M

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6-pin DIP high voltage transistor Optocoupler

General Description

The H11DXM and 4N38M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
H11D1M Full Production ROHS Compliant $0.61 MDIP 6 BULK PDF Line 1:UNK
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H11D1SM Full Production ROHS Compliant $0.61 MDIP 6 BULK PDF Line 1:UNK
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H11D1SR2M Full Production ROHS Compliant $0.65 MDIP 6 TAPE REEL PDF Line 1:UNK
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H11D1SR2VM Full Production ROHS Compliant $0.65 MDIP 6 TAPE REEL PDF Line 1:UNK
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H11D1SVM Full Production ROHS Compliant $0.77 MDIP 6 BULK PDF Line 1:UNK
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H11D1VM Full Production ROHS Compliant $0.61 MDIP 6 BULK PDF Line 1:UNK
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Support

Engineering Connections

Qualification Support

  • Customer qualification data for the H11D1SVM
  • Customer qualification data for the H11D1SM
  • Customer qualification data for the H11D1VM
  • Customer qualification data for the H11D1SR2VM
  • Customer qualification data for the H11D1SR2M
  • Customer qualification data for the H11D1M

Features

  • High voltage:
  • H11D1M, H11D2M, BVCER = 300V
  • H11D3M, BVCER = 200V
  • High isolation voltage:
  • 7500 VAC peak, 1 second
  • Underwriters Laboratory (UL) recognized File # E90700, Volume 2
  • Power supply regulators
  • Digital logic inputs
  • Microprocessor inputs
  • Appliance sensor systems
  • Industrial controls
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