H11F3M

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6-Pin DIP Bilateral Analog FET Output Optocoupler

General Description

The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
H11F3M Full Production ROHS Compliant $1.28 MDIP 6 BULK PDF Line 1:UNK
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H11F3SM Full Production ROHS Compliant $1.28 MDIP 6 BULK PDF Line 1:UNK
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H11F3SR2M Full Production ROHS Compliant $1.37 MDIP 6 BULK PDF Line 1:UNK
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H11F3SR2VM Full Production ROHS Compliant $1.37 MDIP 6 BULK PDF Line 1:UNK
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H11F3SVM Full Production ROHS Compliant $1.28 MDIP 6 BULK PDF Line 1:UNK
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H11F3VM Full Production ROHS Compliant $1.28 MDIP 6 BULK PDF Line 1:UNK
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Support

Engineering Connections

Qualification Support

  • Customer qualification data for the H11F3VM
  • Customer qualification data for the H11F3SM
  • Customer qualification data for the H11F3SR2VM
  • Customer qualification data for the H11F3M
  • Customer qualification data for the H11F3SVM
  • Customer qualification data for the H11F3SR2M

Features

  • As remote variable resistor
  • ≤ 100Ω to ≥ 300MΩ
  • ≥ 99.9% linearity
  • ≤ 15pF shunt capacitant
  • ≥ 100GΩ I/O isolation resistance As an analog switch
  • Extremely low offset voltage
  • 60Vpk-pk signal capability
  • No charge injection or latch-up
  • ton, toff ≤ 15µS
  • UL recognized (File #E90700)

Applications

  • TBA

Safety Agency Certificates

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