The H11FXM series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

As remote variable resistor

• ≤ 100Ω to ≥ 300MΩ
• ≥ 99.9% linearity
• ≤ 15pF shunt capacitant
• ≥ 100GΩ I/O isolation resistance

As an analog switch

• Extremely low offset voltage
• 60Vpk-pk signal capability
• No charge injection or latch-up
• t_on, t_off  ≤ 15μS
• UL recognized (File #E90700)

As a remote variable resistor

• Isolated variable attenuator
• Automatic gain control
• Active filter fine tuning/band switching

• Isolated sample and hold circuit
• Multiplexed, optically isolated A/D conversion