HGT1S10N120BNS

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1200V, NPT Series N-Channel IGBT

General Description

The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49290.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
HGT1S10N120BNST Full Production ROHS Compliant $2.81 TO-263(D2PAK) 2 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:10N120BN
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HGT1S10N120BNS Full Production ROHS Compliant $2.73 D2PAK/TO263 3-LEAD 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:10N120BN
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Features

  • 35A, 1200V, TC = 25&°C
  • 1200V Switching SOA Capability
  • Typical Fall Time. . . . . . . . . .140ns at TsubJ/sub = 150ºC
  • Short Circuit Rating
  • Low Conduction Loss
  • Avalanche Rated
  • Thermal Impedance SPICE Model
  • Temperature Compensating SABERsup™Model
  • Related Literature
  • TB334 “Guidelines for Soldering Surface MountComponents to PC Boards

Applications

  • TBA

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
SABER
D2PAK/TO263 3-LEAD-3 Thermal 25°C to 175°C N/A Saber 2004 Jun 14, 2011
Electrical -55°C to 150°C N/A Saber 2004 Jun 14, 2011
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