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54A, 1200V, NPT Series N-Channel IGBTwith Anti-Parallel Hyperfast Diode
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General Description
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The HGTG18N120BND is a Non–Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
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Features
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54A, 1200V, TC = 25°C
1200V Switching SOA Capability
Typical Fall Time . . . . . . . . . . . . . . . 140ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
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Datasheet
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Product Status/Pricing/Packaging 
| HGTG18N120BND | Full Production | RoHS Compliant | $7.62 | TO-247 | 3 | RAIL
| TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K
Line 2: 18N120BND
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Qualification Support
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