|  |
600V
| | | | | |
|
|
General Description
The HGTG20N60A4D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49339. The diode used in anti-parallel
is the development type TA49372.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49341.
|
back to top
Features
- >100kHz Operation At 390V, 20A
- 200kHz Operation At 390V, 12A
- 600V Switching SOA Capability
- Typical Fall Time . . . . . . . . . . . . . . . . .55ns at TJ = 125°C
- Low Conduction Loss
- Temperature Compensating SABER™ Model
|
back to top
| | 
Datasheet
Download this datasheet
e-mail this datasheet
![[E-mail]](/graphics/mail.gif)
This page
|
Product Status/Pricing/Packaging
| HGTG20N60A4D | Full Production | RoHS Compliant | $5.38 | TO-247 | 3 | RAIL
| N/A | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2: 20N60A4D
|
* Fairchild 1,000 piece Budgetary Pricing
|
| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
back to top
Models
back to top
Application Notes
back to top
Qualification Support
Click on a product for detailed qualification data
back to top
|
Eco Status