This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25°C and 150°C. The IGBT used is the
development type TA49339. The diode used in anti-parallel
is the development type TA49372.
These IGBT’s are ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. These devices have been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49341.
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