The HGTG20N60B3 is a Generation III MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower onstate
voltage drop varies only moderately between 25°C and
150°C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49050.
|
