HGTG20N60B3 − 600V, UFS Series N-Channel IGBT

Not recommended for new design as of 07-Dec-2009

The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Download Datasheet Product Availability

Product Status/Packaging

Product Product & Eco Status Replacement Part Number Packaging & Packing Info **Package Marking Convention Qualification Support Compliance Certificates
1 HGTG20N60B3 Not recommended for new design as of 07-Dec-2009
Green as of Aug 2013
4.7 x 15.62 x 20.57mm

Line 1:$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
Line 2:HG20N60B3
FIT :  5.1  
Moisture Sensitivity Level (MSL) :  NA  
Max Reflow Temp :  NA  


  • 40A, 600V at TC = 25°C
  • 600V Switching SOA Capability
  • Typical Fall Time: 140ns at 150°C
  • Short Circuit Rated
  • Low Conduction Loss

Application Notes

Application Note Description
AN-6004 500W Power-Factor-Corrected (PFC) Converter Design with FAN4810(547 K) 05-Mar-2011

© Copyright Fairchild Semiconductor. All rights reserved. Privacy Policy | Site Terms & Conditions | Standard Terms & Conditions of Sale | Trademarks | Site Map | IPC Saving our world 1mW at a time
  Knowledge Base Support Request Form.
  Slide to enable Submit button:
Locked Unlocked