HGTG20N60B3 − 600V, PT IGBT


The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

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Product Status/Pricing/Packaging

Product Product & Eco Status *Pricing Packaging & Packing Info **Package Marking Convention Qualification Support Compliance Certificates
0 HGTG20N60B3 Not recommended for new design
Green as of Aug 2013
$3.26  Details
4.7 x 15.62 x 20.57mm

Line 1:$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
Line 2:HG20N60B3
FIT :  5.1  
RƟJC :  0.76  °C/W


  • 40A, 600V at TC = 25°C
  • 600V Switching SOA Capability
  • Typical Fall Time: 140ns at 150°C
  • Short Circuit Rated
  • Low Conduction Loss


  • Other Industrial

Application Notes

Application Note Description
AN-6004 500W Power-Factor-Corrected (PFC) Converter Design with FAN4810(547 K) 05-Mar-2011

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