HGTG27N120BN

The HGTG27N120BN and HGT5A27N120BN are Non- Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

• Fairchild 1,000 piece Budgetary Pricing. *
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• Top mark packaging information for product HGTG27N120BN is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	RoHS IPC1752	RoHS/REACH/JIG Certificate of Compliance
HGTG27N120BN	Full Production	ROHS Compliant	$10.12	TO-247	3	RAIL		Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2:G27N120BN