The HGTG27N120BN and HGT5A27N120BN are Non- Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49280.

• 72A, 1200V, TC = 25°C
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T_J = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
  Temperature Compensating SABER™ Model
  www.fairchildsemi.com
• Avalanche Rated