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600V, SMPS Series N-Channel IGBT
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General Description
The HGTG30N60A4 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25°C and 150°C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49343.
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Features
- >100kHz Operation at 390V, 30A
- 200kHz Operation at 390V, 18A
- 600V Switching SOA Capability
- Typical Fall Time. . . . . . . . . . 60ns at TJ = 125°C
- Low Conduction Loss
- Temperature Compensating SABERTM Model
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