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600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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General Description
The HGTG30N60A4D is a MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49345.
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Features
- >100kHz Operation at 390V, 30A
- 200kHz Operation at 390V, 18A
- 600V Switching SOA Capability
- Typical Fall Time. . . . . . . . . . 60ns at TJ = 125°C
- Low Conduction Loss
- Temperature Compensating SABERTM Model
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