The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49170.

• 60A, 600V, T_C= 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . 90ns at T_J= 150°C
• Short Circuit Rating
• Low Conduction Loss