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600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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General Description
The HGTG30N60B3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25°C and 150°C. The IGBT used is the
development type TA49170. The diode used in anti-parallel
with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
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Features
- 60A, 600V, TC = 25°C
- 600V Switching SOA Capability
- Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode
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