The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 o C and 150 o C. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49337.

• >100kHz Operation............390V, 12A
• 200kHz Operation............390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time............70ns at T_J = 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.fairchildsemi.com
• Related Literature
• TB334 “Guidelines for Soldering Surface Mount Components to PC Boards"