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24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
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General Description
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25°C and 150°C. The IGBT used is the
development type TA49123. The diode used in anti-parallel
with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
Formerly Developmental Type TA49182.
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Features
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24A, 600V, TC = 25°C
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Typical Fall Time at TJ = 150°C............210ns
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Short Circuit Rating
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Low Conduction Loss
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Hyperfast Anti-Parallel Diode
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