This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

Formerly Developmental Type TA49182.

• 24A, 600V, T_C = 25°C
• Typical Fall Time at T_J = 150°C............210ns
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode