The HGTP2N120CN and HGT1S2N120CN are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs combine
the best features of MOSFETs and bipolar transistors. This
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power supplies
and drivers for solenoids, relays and contactors.
Formerly developmental type TA49313.
|
