HGTP5N120BND

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21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

General Description

The HGTG5N120BND and HGTP5N120BND are Non- Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
HGTP5N120BND Full Production ROHS Compliant $2.06 TO220 3-LEAD 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:5N120BND
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Features

  • 21A, 1200V, TC = 25&°C
  • 1200V Switching SOA Capability
  • Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150&°C
  • Short Circuit Rating
  • Low Conduction Loss
  • Thermal Impedance SPICE ModelTemperature Compensating SABER™ Modelwww.fairchildsemi.com
  • Related Literature
  • TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”

Applications

  • TBA

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
SABER
TO220 3-LEAD-3 Thermal 25°C to 175°C N/A Saber 2004 Jun 14, 2011
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