HGTP7N60A4

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

• Fairchild 1,000 piece Budgetary Pricing. *
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Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	RoHS IPC1752	RoHS/REACH/JIG Certificate of Compliance
HGTP7N60A4	Full Production	ROHS Compliant	$1.34	TO220 3-LEAD	3	RAIL		Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2:7N60A4