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600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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General Description
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25°C
and 150°C at rated current. The IGBT is developmental type
TA49190. The diode used in anti-parallel with the IGBT is the
RHRD660 (TA49057).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49191.
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Features
- 14A, 600V, TC = 25°C
- 600V Switching SOA Capability
- Typical Fall Time. . . . . . . . . . . . 120ns at TJ = 150°C
- Short Circuit Rating
- Low Conduction Loss
- Hyperfast Anti-Parallel Diode
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