The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49121.

• 4A, 600V at T_C = 25°C
• 600V Switching SOA Capability
• Typical Fall Time...................140ns at T_J = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode