HUF75321D3ST

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20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFET

General Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.     Formerly developmental type TA75321.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
HUF75321D3ST Full Production ROHS Compliant $0.67 TO-252 3L (DPAK) 3 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:75321D
FIT :  6.5  
RTHETA (JA) :  100  °C/W
RTHETA (JC) :  1.6  °C/W
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Features

  • 20A, 55V
  • Temperature Compensating PSPICE® and SABER™Models
  • Thermal Impedance SPICE and SABER ModelsAvailable on the web at: www.fairchildsemi.com
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve
  • Related Literature
  • TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”

Applications

  • AC-DC Merchant Power Supply - Servers & Workstations
  • Server & Mainframe
  • Workstation

Application Notes

Multilanguage - Chinese Multilanguage - English Multilanguage - Japanese Multilanguage - Korean