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Discrete Commercial Dual N-Channel Logic Level UltraFET Power MOSFET, 60V, 5.1A, 0.049 Ohms @ VGS = 10V, SO-8 Package. (Transferred to alternate site. Please contact local reps for details)
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General Description
These N-Channel power MOSFETs are manufactured using
the innovative UltraFET® process. This advanced process
technology achieves the lowest possible onresistance
per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy
in the avalanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for
use in applications where power efficiency is important,
such as switching regulators, switching convertors, motor
drivers, relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.
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Features
- 150°C Maximum Junction Temperature
- UIS Capability (Single Pulse and Repetitive Pulse)
- Ultra-Low On-Resistance rDS(ON) = 0.049W, VGS = 10V
- Ultra-Low On-Resistance rDS(ON) = 0.056W, VGS = 5V
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Applications
- Motor and Load Control
- Powertrain Management
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