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IRF540A
100V N-Channel A-FET / Substitute of IRF540
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Features
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175°C Operating Temperature
Lower Leakage Current : 10
µ
A (MAX.) @ V
DS
= 100V
Lower R
DS(ON)
: 0.041
W
(Typ.)