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500V N-Channel B-FET / Substitute of IRF840 & IRF840A
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General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
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Features
- 8.0A, 500V, RDS(on) = 0.8W @VGS = 10V
- Low gate charge (typical 41 nC)
- Low Crss (typical 35 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
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