These N-Channel enhancement mode power field effect transistors are produced using Fairchild.s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast.

• 0.6A, 250V, R_DS(on) = 2.0W @V_GS = 10V
• Low gate charge (typical 8.1 nC)
• Low Crss (typical 7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability