These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

• 4.6A, 200V, R_DS(on) = 0.8W @ V_GS = 10 V
• Low gate charge (typical 12 nC)
• Low Crss (typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability